note: all specifications are subjec t to change without notification. scd's for these devices should be re viewed by ssdi prior to release. data sheet #: f00129h doc solid state devices, inc. 14701 firestone blvd * la mirada, ca 90638 phone: (562) 404-4474 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com designer?s data sheet part number / ordering information 1 / sff80n20 ___ ___ ___ screening 2 / __ = not screened tx = tx level txv = txv level s = s level lead option 3 / __ = straight leads db = down bend ub = up bend package 3 / 4 / m = to-254 z = to-254z n = to-258 p = to-259 sff80n20 series 80 amp , 200 volts, 25 m ? avalanche rated n-channel mosfet features: ? rugged poly-si gate ? lowest on-resistance in the industry ? avalanche rated ? hermetically sealed, isolated package ? low total gate charge ? fast switching ? tx, txv, s-level screening available ? improved (r ds(on) q g ) figure of merit maximum ratings 5 / symbol value units drain - source voltage v dss 200 v gate ? source voltage continuous transient v gs 20 30 v max. continuous drain current (package limited) @ t c = 25oc i d1 55 a max. instantaneous drain current (tj limited) @ t c = 25oc @ t c = 175oc i d2 i d3 80 48 a max. avalanche current @ l= 0.1 mh i ar 60 a single and repetitive avalanche energy @ l= 0.1 mh e as e a r 1500 50 mj total power dissipation @ t c = 25oc p d 150 w operating & storage temperature t op & t stg -55 to +175 oc maximum thermal resistance (junction to case) r jc 1.0 (typ.0.75) oc/w to-254 (m) to-254z (z) to-258 (n) to-259 (p) notes: *pulse test: pulse width = 300sec, duty cycle = 2%. 1 / for ordering information, price, and availability - contact factory. 2 / screening based on mil-prf-19500. screening flows available on request. 3 / for lead bending options / pinout configurations - contact factory. 4 / maximum current limited by package configuration 5 / unless otherwise specified, all electrical characteristics @25 o c.
note: all specifications are subjec t to change without notification. scd's for these devices should be re viewed by ssdi prior to release. data sheet #: f00129h doc solid state devices, inc. 14701 firestone blvd * la mirada, ca 90638 phone: (562) 404-4474 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com sff80n20 series electrical characteristics 5 / symbol min typ max units drain to source breakdown voltage v gs = 0v, i d = 250 a bv dss 200 220 ?? v drain to source on state resistance v gs = 10v, i d = 48a, tj= 25 o c v gs = 10v, i d = 48a, tj=125 o c v gs = 10v, i d = 48a, tj= 175 o c r ds(on) ?? ?? ?? 25 50 65 30 65 ?? m ? gate threshold voltage v ds = v gs , i d = 4.0ma, tj= 25 o c v ds = v gs , i d = 4.0ma, tj= 125 o c v ds = v gs , i d = 4.0ma, tj= -55 o c v gs(th) 2.5 1.5 ?? 4.5 3.6 5 5.0 ?? 6 v gate to source leakage v gs = 20v, tj= 25 o c v gs = 20v, tj= 125 o c i gss ?? ?? 10 30 100 ?? na zero gate voltage drain current v ds = 200v, v gs = 0v, t j = 25 o c v ds = 200v, v gs = 0v, t j = 125 o c v ds = 200v, v gs = 0v, t j = 150 o c i dss ?? ?? ?? 0.01 2.5 25 25 150 ?? a a a forward transconductance v ds = 10v, i d = 48a, t j = 25 o c g fs 25 50 ?? mho total gate charge gate to source charge gate to drain charge v gs = 10v v ds = 100v i d = 48a q g q gs q g d ?? ?? ?? 150 45 75 250 65 120 nc turn on delay time rise time turn off delay time fall time v gs = 10v v ds = 100v i d = 48a r g = 4.0 ? , pw= 3us t d(on) t r t d(off) t f ?? ?? ?? ?? 50 50 110 50 75 75 135 75 nsec diode forward voltage i f = 48a, v gs = 0v v sd ?? 0.90 1.5 v diode reverse recovery time reverse recovery charge i f = 10a, di/dt = 100a/usec i f = 10a, di/dt = 100a/usec i f = 10a, di/dt = 100a/usec i f = 25a, di/dt = 100a/usec i f = 25a, di/dt = 100a/usec i f = 25a, di/dt = 100a/usec t rr1 i rm1 q rr1 t rr2 i rm2 q r r 2 ?? ?? ?? ?? ?? ?? 190 11 1 310 17 2.5 250 ?? ?? ?? ?? ?? nsec a c nsec a c input capacitance output capacitance reverse transfer capacitance v gs = 0v v ds = 25v f = 1 mhz c iss c oss c rss ?? ?? ?? 5300 1050 175 ?? ?? ?? pf
note: all specifications are subjec t to change without notification. scd's for these devices should be re viewed by ssdi prior to release. data sheet #: f00129h doc solid state devices, inc. 14701 firestone blvd * la mirada, ca 90638 phone: (562) 404-4474 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com sff80n20 series to-254 (m) to-254z (z) to-258 (n) to-259 (p) pin assignment (standard) package drain source gate to-254 (m) pin 1 pin 2 pin 3 to-254z (z) pin 1 pin 2 pin 3 to-258 (n) pin 1 pin 2 pin 3 to-259 (p) pin 1 pin 2 pin 3
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